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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub-Micron Bipolar Line
RF Power Bipolar Transistors
The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large-signal, common emitter class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi-carrier base station RF power amplifiers. * Guaranteed Two-tone Performance at 2000 MHz, 26 Volts Output Power -- 60 Watts (PEP) Power Gain -- 9 dB Efficiency -- 33% Intermodulation Distortion -- -30 dBc * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP) Output Power * Designed for FM, TDMA, CDMA and Multi-Carrier Applications * Test Fixtures Available at: http://mot-sps.com/rf/designtds/ Note: Not suitable for class A operation.
MRF20060R MRF20060RS
60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR
ARCHIVE INFORMATION
CASE 451-06, STYLE 1 (MRF20060R)
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CASE 451A-03, STYLE 1 (MRF20060RS)
MAXIMUM RATINGS
Rating Collector-Emitter Voltage (IB = 0 mA) Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage (RBE = 100 Ohm) Base-Emitter Voltage Collector Current - Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VCBO VCER VEB IC PD Tstg TJ Value 25 60 60 30 -3 8 250 1.43 - 65 to +150 200 Unit Vdc Vdc Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Rating Thermal Resistance, Junction to Case Symbol RJC Max 0.7 Unit C/W
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REV 3
MOTOROLA RF Motorola, Inc. 2000 DEVICE DATA
MRF20060R MRF20060RS 1
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Reverse Base-Emitter Breakdown Voltage (IB = 10 mAdc, IC = 0) Zero Base Voltage Collector Leakage Current (VCE = 30 Vdc, VBE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 25 60 60 3 -- 28 69 69 3.5 -- -- -- -- -- 10 Vdc Vdc Vdc Vdc mAdc
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ON CHARACTERISTICS
DC Current Gain (VCE = 5 Vdc, IC = 1 Adc) hFE 20 40 80 --
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) Cob -- 55 -- pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Output Mismatch Stress (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) (1) For Information Only. This Part Is Collector Matched. Gpe 9 9.8 -- dB
33
35
--
%
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IMD
--
- 32
- 30
dB
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IRL 12 19 -- dB
No Degradation in Output Power
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MRF20060R MRF20060RS 2 MOTOROLA RF DEVICE DATA
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VBB R1 Q2 D1 Q1 C1 + C3 R2 R3 L4 L2 RF INPUT Z1 C2 Z2 C4 Z3 C5 Z4 Z5 Z6 DUT Z7 C11 Z9 Z10 C13 RF OUTPUT L1 C6 L3 C7 C8 C9 C10 C12 R4 C14 C15 B1 + VCC L5
ARCHIVE INFORMATION
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B1 C1 C2, C4, C13 C3, C14 C5 C6, C12 C7, C9 C8, C10 C11 C15
Ferrite Bead, P/N 5659065/3B, Ferroxcube 100 F, 50 V, Electrolytic Capacitor, Mallory 0.6-4.0 pF, Variable Capacitor, Gigatrim, Johanson 0.1 F, Chip Capacitor, Kemit 15 pF, B Case Chip Capacitor, ATC 1000 pF, B Case Chip Capacitor, ATC 91 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 13 pF, B Case Chip Capacitor, ATC 470 F, 50 V, Electrolytic Capacitor, Mallory
D1 L1, L5 L2, L4 L3 R1 R2 R3, R4 Q1 Q2 Board
Diode, Motorola (MURS160T3) 12 Turns, 22 AWG, 0.140 Choke .5 inch of 20 AWG 12.5 nH Inductor 2 x 130 , 1/8 W Chip Resistor, Rohm 2 x 100 , 1/8 W Chip Resistor, Rohm 10 , 1/2 W, Resistor Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) Glass Teflon, Arlon GX-0300-55-22, r
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Figure 1. 1.93 - 2 GHz Test Fixture Electrical Schematic
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MOTOROLA RF DEVICE DATA MRF20060R MRF20060RS 3
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TYPICAL CHARACTERISTICS
70 Pout , OUTPUT POWER (WATTS) 60 50 40 30 20 10 0 0 2 Pout 11.5 11 10.5 10 Gpe G pe , GAIN (dB) 70 Pout , OUTPUT POWER (WATTS) 60 50 5W Pin = 7 W
40 30 20 VCC = 26 Vdc ICQ = 200 mA 1850 1900 f, FREQUENCY (MHz) 1950 2000 3W
9.5 9
VCC = 26 Vdc ICQ = 200 mA f = 2000 MHz Single Tone 6 4 Pin, INPUT POWER (WATTS) 8
8.5 8 10
10 0 1800
ARCHIVE INFORMATION
Figure 2. Output Power & Power Gain versus Input Power
Figure 3. Output Power versus Frequency
IMD, INTERMODULATION DISTORTION (dBc)
- 30 - 40 - 50 - 60 - 70 0
3rd Order 5th Order 7th Order VCC = 26 Vdc ICQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 10 30 50 20 60 40 Pout, OUTPUT POWER (WATTS) PEP 70
10 G pe , GAIN (dB) 9.5 9 Gpe
-15 -20 -25 -30 Pout = 60 W (PEP) ICQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 20 IMD -35 -40 28
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IMD, INTERMODULATION DISTORTION (dBc)
- 20
10.5
-10
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8 80 7.5 18
8.5
22 24 26 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc)
Figure 4. Intermodulation Distortion versus Output Power
Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage
IMD, INTERMODULATION DISTORTION (dBc)
- 20 - 25 - 30 - 35 - 40 - 45 - 50 0.1 400 mA 600 mA 1.0 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP 200 mA ICQ = 100 mA
11 ICQ = 600 mA G pe , POWER GAIN (dB) 10 400 mA 9 8 7 6 0.1 200 mA
100 mA 1.0 10
VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus Output Power
Figure 7. Power Gain versus Output Power
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MRF20060R MRF20060RS 4 MOTOROLA RF DEVICE DATA
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10
9.5 G pe , GAIN (dB)
Pout = 60 W (PEP) VCC = 26 Vdc ICQ = 200 mA
38 Gpe 36
COLLECTOR EFFICIENCY (%) INPUT VSWR
9
34
1.3:1
8.5
VSWR
32
1.2:1
8 1900
1920
1940 1960 f, FREQUENCY MHz)
1980
28 2000
1.1:1
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1.E+11 MTBF FACTOR (HOURS x AMPS 2 ) 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 0
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50 100 150 200 TJ, JUNCTION TEMPERATURE (C) 250
This above graph displays calculated MTBF in hours x ampere2 emitter curent. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by IC2 for MTBF in a particular application.
Figure 9. MTBF Factor versus Junction Temperature
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MOTOROLA RF DEVICE DATA MRF20060R MRF20060RS 5
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Figure 8. Performance in Broadband Circuit
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+j1
+j0.5
+j2
f = 1.8 GHz Zin f = 1.8 GHz
+j0.2
1.85 GHz 1.9 GHz 1.95 GHz 2 GHz 2 GHz 1.95 GHz 1.9 GHz Zo = 10
+j3
ZOL* 1.85 GHz
+j5
+j10
0.0
0.2
0.5
1
2
3
5
ARCHIVE INFORMATION
-j10
-j0.2
-j5
-j3
-j0.5
-j2
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-j1
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VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP) f MHz 1800 1850 1900 1950 2000 Zin(1) 1.0 + j4.8 1.5 + j4.8 2.0 + j4.7 2.5 + j4.7 3.5 + j4.7 ZOL* 1.7 + j3.3 2.2 + j2.7 2.4 + j3.0 2.3 + j3.2 2.0 + j3.4
Zin(1) = Conjugate of fixture base terminal impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency.
Figure 10. Series Equivalent Input and Output Impedence
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MRF20060R MRF20060RS 6 MOTOROLA RF DEVICE DATA
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Table 1. Common Emitter S-Parameters at VCE = 24 Vdc, IC = 3.5 Adc f GHz
1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95
S11 |S11|
0.986 0.985 0.981 0.973 0.968 0.951 0.914 0.851 0.789 0.810 0.880 0.934 0.964 0.977 0.975 0.961 0.942 0.919 0.860 0.821 0.781
S21 f
168 167 167 166 165 163 161 161 164 170 172 170 168 165 163 161 160 157 156 159 161
S12 f
81 76 70 63 56 46 32 12 -15 -44 -68 -85 -98 -109 -118 -128 -139 -149 -163 177 157.0
S22 f
60 63 61 53 50 47 39 26 5 -7 -151 152 158 164 165 160 149 142 137 122 108
|S21|
0.32 0.35 0.40 0.45 0.52 0.62 0.76 0.91 1.02 0.94 0.75 0.57 0.45 0.36 0.30 0.25 0.22 0.19 0.17 0.15 0.14
|S12|
0.031 0.031 0.032 0.030 0.033 0.028 0.027 0.024 0.015 0.005 0.006 0.010 0.015 0.022 0.033 0.049 0.066 0.077 0.100 0.128 0.156
|S22|
0.923 0.918 0.908 0.897 0.889 0.880 0.871 0.863 0.888 0.931 0.953 0.967 0.965 0.955 0.950 0.947 0.938 0.931 0.922 0.914 0.907
f
169 169 169 169 168 169 170 171 174 174 172 170 169 168 167 167 166 165 165 165 165
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2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5
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MOTOROLA RF DEVICE DATA MRF20060R MRF20060RS 7
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NOTES
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MRF20060R MRF20060RS 8 MOTOROLA RF DEVICE DATA
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NOTES
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MOTOROLA RF DEVICE DATA MRF20060R MRF20060RS 9
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NOTES
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MRF20060R MRF20060RS 10 MOTOROLA RF DEVICE DATA
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PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE.
G
1
R
3 2
-B-
Q K D
2 PL
0.25 (0.010)
M
TA
M
B
M
N H E
F C -T-
SEATING PLANE
DIM A B C D E F G H K N Q R
INCHES MIN MAX 0.995 1.005 0.380 0.390 0.156 0.191 0.455 0.465 0.060 0.075 0.004 0.006 0.800 BSC 0.078 0.090 0.117 0.137 0.595 0.605 0.120 0.130 0.395 0.410
MILLIMETERS MIN MAX 25.27 25.53 9.65 9.91 3.96 4.85 11.56 11.81 1.52 1.91 0.10 0.15 20.32 BSC 1.98 2.29 2.97 3.48 15.11 15.37 3.05 3.30 10.03 10.41
-A-
CASE 451-06 ISSUE F (MRF20060R)
STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER
1
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K D N H E
2
-B-
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. DIM A B C D E F H K N INCHES MIN MAX 0.615 0.625 0.395 0.410 0.156 0.191 0.455 0.465 0.060 0.075 0.004 0.006 0.078 0.090 0.117 0.137 0.595 0.605 MILLIMETERS MIN MAX 15.62 15.88 10.03 10.41 3.96 4.85 11.56 11.81 1.52 1.91 0.10 0.15 1.98 2.29 2.97 3.48 15.11 15.37
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F C -T-
SEATING PLANE
-A-
3
CASE 451A-03 ISSUE B (MRF20060RS)
STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER
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MOTOROLA RF DEVICE DATA MRF20060R MRF20060RS 11
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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 Mfax: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569
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MRF20060R MRF20060RS 12
MOTOROLA RF DEVICE DATA MRF20060R/D
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